A new kind of step-flow growth mode is proposed, which adopts sidewall as step source on patterned GaN substrate. The terrace width of steps originated from the sidewall was found to change with the growth temperature and ammonia flux. The growth mechanism is explained and simulated based on step motion model. This work helps better understand the behaviors of step advancement and puts forward a method of precisely modulating atomic steps.

The InGaN films and GaN/InGaN/GaN tunnel junctions (TJs) were grown on GaN templates with plasma-assisted molecular beam epitaxy. As the In content increases, the quality of InGaN films grown on GaN templates decreases and the surface roughness of the samples increases. V-pits and trench defects were not found in the AFM images. p⁺⁺-GaN/InGaN/n⁺⁺-GaN TJs were investigated for various In content, InGaN thicknesses and doping concentration in the InGaN insert layer. The InGaN insert layer can promote good interband tunneling in GaN/InGaN/GaN TJ and significantly reduce operating voltage when doping is sufficiently high. The current density increases with increasing In content for the 3 nm InGaN insert layer, which is achieved by reducing the depletion zone width and the height of the potential barrier. At a forward current density of 500 A/cm², the measured voltage was 4.31 V and the differential resistance was measured to be 3.75 × 10^?3 Ω·cm² for the device with a 3 nm p⁺⁺-In_0.35Ga_0.65N insert layer. When the thickness of the In_0.35Ga_0.65N layer is closer to the “balanced” thickness, the TJ current density is higher. If the thickness is too high or too low, the width of the depletion zone will increase and the current density will decrease. The undoped InGaN layer has a better performance than n-type doping in the TJ. Polarization-engineered tunnel junctions can enhance the functionality and performance of electronic and optoelectronic devices.

为了解决国内外能见度参数量值无法绝对溯源的问题，利用透射式能见度仪的工作原理、结构特点以及环境条件，提出了溯源至几何量的量值复现方法，设计了1套高透射比量具作为主标准器，实现了对透射式能见度仪的校准，促进了能见度参数量值溯源体系的发展。主标准器遮光体采用精密机械加工工艺，遵循几何量参数测量的绝对溯源法，可大幅减小透射比量值的测量不确定度；主标准器滤光片根据几何量测量和光学透射比参数测量相结合的溯源链，解决了现有技术中高透射比无法复现和准确测量的问题。此外，使用锥形遮光体，可避免引入除旋转因素外的其他不确定度来源，大幅提升了能见度仪分辨率的校准能力。

以衣康酸（IA）作为第二单体，采用水相沉淀聚合法制备出IA含量不同的聚丙烯腈（PAN）粉末，在室温及空气气氛中对衣康酸丙烯腈共聚物（P(AN-co-IA)）粉末进行电子束辐照（EB）处理，吸收剂量为25~200 kGy。通过傅里叶红外光谱仪对P(AN-co-IA)进行化学结构表征，通过差示扫描量热仪及热失重分析仪研究IA含量对PAN环化的影响，及辐照对P(AN-co-IA)粉末热性能的影响。结果表明，EB改性通过自由基机制促进了PAN的环化反应，使其在较低温度下发生；引入IA改性PAN则通过离子机制引发环化反应。两种改性方法对环化的促进作用可以叠加，有协同作用，但随着吸收剂量和IA含量的增加，这种协同作用效果逐渐减小。定义吸收剂量每增加10 kGy，P(AN-co-IA)放热焓的减少量为影响系数，吸收剂量小于100 kGy时，电子束辐照对P(AN-co-IA)放热焓的减少有显著影响，但其影响随着吸收剂量的增加而快速减小，超过100 kGy后，影响系数的减小趋势开始变缓和。

脉冲时域相干合成技术主要通过对功率放大后的高重频脉冲序列进行时序合成，从而降低激光的重复频率，有效地提升输出脉冲的峰值功率与能量，避免放大过程中高峰值功率引起的非线性效应。该技术与空域相干合成相结合，能够突破单纤激光的性能极限，实现高能量、高平均功率和高峰值功率的超短脉冲激光输出，具有广阔的应用前景。介绍了超短脉冲光纤激光时域相干合成的基本原理和关键技术，综述了时域相干合成系统的发展历程及其关键技术的研究现状，重点介绍了近年来脉冲分割放大与脉冲相干堆积技术的研究进展，并对时域相干合成的不同技术路线进行了分析与比较，最后对其未来的发展方向进行了梳理，为相关领域的研究提供参考。